Главная Промышленная автоматика.

[222] Tserng, H.Q., et al., 1978 IEEE International Solid-State Circuits Conference, (Digest of Technical Papers), 122-3.

[223] Tserng, H.Q., and H.M. Macksey, 1978 IEEE MTT-S International Microwave Symposium Digest, 282-4.

[224] Tserng, H.Q., Microwave Journal, pp. 94-100, June 1979.

[225] Tucker, R.S., IEEE Trans. Microwave Theory and Techniques, MTT 21:322, 1973.

[226] Tucker, R.S., and C. Rauschcr, Elect. Lett., 13:508, 1977.

[227] Mlnch,., Microwaves, 17:66, 1978.

[228] van Heuven, J.H.C., IEEE Trans. Microwave Theory and Techniques, MTT-22:841, 1974.

[229] Van Tuyl, R.L., 1978 IEEE International Solid-State Circuits Conference (Digest of Technical Papers), 72-3.

[230] Vendelin, G.D., and M. Omori, Electron. Lett., 11:60, 1975. [231] Vendelin, G.D., and M. Omon, Microwaves, 14:58, 1975. [232] Vendelin, G.D., IEEE Trans. Microwave Theory Tech.,

MTT-24:383, 1976. [23 3] Vendelin, G.D., IEEE Eleventh Annual Asilomar Conference

on Circuits Systems and Computers, 139-141, 1978. [234] VcndcWn, G.D..Microwaves, 17:40, 1978. [235] Vincent, G.A., Frequency Technology, 1969, p. 15-21. [236] Wade, P.C, 1978 IEEE International Solid-State Circuits

Conference (Digest of Technical Papers), 120-1. [237] Walker, M.G., F.T. Mauch, and T.C. Williams, Microwaves,

14: 1975.

[238] Walker, M.G., F.A. Marki, and H.M. Kbrumoviitz,Microwave Syst. News, 6:39, 1976.

[239] Walker, M.G., and E.J. Crescenzi, Jr., 1976 IEEE MTT-S International Microwave Symposium, 107-9.

[240] Wemple, S.H., M.L. Steinberger, and W.D. Schlosser, Electron.

Lett., 16:459, 1980.

[241] Williams, R.E., and D.W. Shaw, IEEE Trans. Electron Devices, ED-25:600, 1978.

[242] Williams, R.E., and D.W. Shaw, Electron. Lett., 13:400, 1977.

[243] Willing, H.A., С Rauscher, and P. deSantis, IEEE Trans. Microwave Theory Tech., MTT-26:1013, 1978.



[244] Wilkinson, E., IRE Trans, on Microwave Theory and Techniques, MTT8:116, 1960.

[245] Woo, A.N., and D.R. CWen, Microwave J., 17:26, 1974.

[246] Youla, D.C, IEEE Trans. Circuit Theory, CT-11:30, 1969.

[247] Yamamura, S., et al., 1979 IEEE MTT-S International Microwave Symposium, 335-337.

[248] Yokouchi, H., et al., 1978 IEEE MTT-S International Microwave Symposium Digest, 276-278.

к главе IS

[1] Wilson, D.O., W.R. Scoble, R.P. Mandal and H.L. Petersen, "A Comparison of High-Speed Enhancement and Depletion Mode GaAs MESFETS," International Electron Devices Meeting, Washington, DC, Dec. 5, 1978, pp. 601-603.

[2] Mandal, R.P., and W.R. Scoble in Gallium Arsenide and Related Compounds (St. Louis) 1978 (Inst. Phys. Conf. Ser. no. 45) pp. 462-471. London: Adam Helger/The Institute of Physics, 1979.

[3] Phillips, D.H., W.W. Grannemann, L.E. Coerver, and G.J. Kuhlmann, "Fabrication of GaAs MIS Capacitors Using a Thermal Oxidation Dielectric-Growth Process," presented at the 141st National Meeting of the Electrochemical Society, Houston, Texas, May 7-12, 1972; Journal of the Electrochemical Society, 120:1087, 1973.

[4] Leichti, C, R. Van Tuyl, R.E. Lee, and E. Gowen, IEEE Journal Solid State Circuits, SC-12:485, 1977.

[5] Eden, R.C, "GaAs Integrated Circuits MSI Status and VLSI Prospects," 1978 Int. Electron Devices Meeting, Tech. Digest, Dec. 1978, pp. 6-11.

[6] Eden, R.C, et al., IEEE Journal Solid State Circuits, SC-14: 221, 1979.

[7] Hewitt, В., et al., Electron. Lett., 11:309, 1976.

[8] Hartgring, CD., W.G. Oldham, and Tsu-Yin Chiu, Solid State Electronics, 23:121, 1980.

[9] Macksey, H.M., and R.L. Adams, "Fabrication Processes for



GaAs Power FETs," Proc. Fifth Biennial Cornell Elect. Eng. Conf, Cornell University, Ithica, NY, 1975.

[10] Zuleeg, R., J. Notthoff, K. Lehovec, IEEE Trans, on Electron. Devices, ED-25:628, 1978.

[11] Phillips, D.H., Military Electronics/Countermeasures, 5:24, 1979.

[12] Phillips, D.H., "Outlook for the Development of Gallium Arsenide Circuits," Paper No. 1, IEEE Gallium Arsenide Integrated Circuit Symposium, Lake Tahoe, Nevada, September 27, 1979.

[13] Phillips, D.H., and H.L. Petersen, "High-Speed Gallium Arsenide Integrated Circuit Development for Satellite Systems," published by New York University and AlAA, Progress in Astronautics and Aeronautics, 67:391, 1979.

к главе 16

[1] Jutzi, W., Лгс/Ьги £/. Ubertragung AEU, 25:595, 1971.

[2] Mead, C.A., Proc. IEEE, 54:307, 1966.

[3] Shockley, W., Proc. Inst. Radio Engrs., 40:1374, 1952.

[4] Van Tuyl, R.L., and C.A. Liechti, IEEE J. Solid-State Circuits, SC-9:269, 1974.

[5] Wilson, D.O., R.F. Mandal, W.R. Scoble, and H.L. Petersen, Intnl. Electron Device Conf., 600, 1978.

[6] Furutsuka, Т., M. Ogawa, and N. Kawamura, IEEE Trans. Electron Devices, 25:580, 1978.

[7] Muta, H., et al., IEEE Trans. Electron Devices, 23:1023, 1976.

[8] Zuleeg, R., J.K. Notthoff, and K. Lehovec, IEEE Trans. Electron Devices, 25:628, 1978.

[9] Solomon, P.H., Intnl. Electron Device Conf. Digest, 201, 1978. [10] Eden, R.C, B.M. Welch, and R. Zucca, IEEE J. Solid-State

Circuits, SC-13:419, 1978. -[11] Mead, C.A., Solid-State Electronics, 9:1023, 1966. [12] Lehovec, K., and R. Zuleeg, Gallium Arsenide and Related

Compounds (Edinburgh) 1976 (Inst. Phys. Conf. Ser. no. 33a) p. 263. London: Adam Helger/The Institute of Physics, 1977.

[13] Taylor, G.W., H.M. Darley, R.C. Frye, and P.K. Chatterjee, IEEE Trans. Electron Devices, ED-26:921, 1978.





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