Главная Промышленная автоматика.

Functions, U.S. Dept. of Commerce, National Bureau of Standards Applied Mathematics Series, No. 55, p. 587, 1970. [8] Maycock, P.D., Solid State Electronics, 10:161, 1967. [9] Huang, H.C, F.N. Sechi, and L.S. Napoli, 6th Biennial Cornell Electrical Engineering Conference, Ithaca, 1977. [10] Dietzel, K.R., V.L. Hein, and V.D. Lenzi, TASJC (Thermal Analysis of Substrates and Integrated Circuits), unpublished BTL program. [11] Fukui, H., (unpubhshed work).

[12] Sechi, F.N., B.S. Perlman, and J.M. Cusack, MTT Symp. Digest, 1977, p. 143.

[13] Описанная здесь измерительная система бьша создана в лабораториях фирмы RCA для фирмы Sandia. См. Automatic Infrared Microscope Manual Report, N2, July, 1977.

[14] Macksey, M., R.L. Adams, E.N. McQuiddy, Jr., D.W. Shaw, and W.R. Wissman, IEEE Trans, on Electron Devices, ED-24: 113, 1977; M. Macksey, private communication.

[15] Stephens, CE., and F.N. Sinnadurai,/ Phys. E., 7:671, 1974.

[16] Например, диапазоны шшзотропных жидкостей следующие.

бутил П - (П-этоксифенокси-карбонил) - фенил карбонат 4-алкил~4 -бис (пенилокси) -азокси-бензол 4-алкил-4-дибутоксиазоксибензол П, П-анзоксидифенетол

Эти жидкие кристаллы разработаны фирмой Eastman Kodak. [17] Buchsbaum, R.J. (unpublished).

[18] Информация об измерительной технике получена от фирмы RCA.

[19] Carslow, H.S., and J.C. Jaeger, Conduction of Heat in Solids. Oxford: Oxford University Press, 1959.

к главе 12

[1] Christou, A., and K. Sieger, 6th Biennial Conf. on Active

Microwave Semiconductor Devices and Circuits, Cornell, 1977. [2] Sinha, A.K., and J.M. Poate, Appl Phys. Lett., 23:666, 1973. [3] Chino, K., and Y. Wada,i/)»7. / .4pp/>yb3/s., 16.1823, 1977.



[4] Irie, Т., I. Nagasako, A. Kohzu, and K. Sekido, JEEE Trans.

on Microwave Theory and Tech., MTT-24:321, 1976. [5] Lundgren, R., Final Technical Report, RADC-TR-78-213,

Oct. 1978.

[6] Drukier, I., and J.F. Silcox, 17th An. Proc. Reliab. Phys. Symp.,

San Francisco, p. 150, 1979. [7] Peck, D.S., and C.H. Zierdt, Jr., Proc. JEEE, 62:185, 1974. [8] Goldthwaite, L.R., Proc. 7th Natl. Symp. Reliab. Quality

Control, Phila., PA, p. 208, 1961. [9] Jordan, A.S., Microelectronics and Reliabiltty, 18:267, 1978. [10] Jordan, A.S., to be published.

[11] Jordan, A.S., J.C. Irvin, andW.O. Schlosser, 18th An. Proc.

Reliab. Phys. Symp., Las Vegas, p. 123, 1980. [12] Irvin, J.C, and A. Loya, Bell Syst. Tech. J., 57:2823, 1978. [13] Ireson, W.G., Reliability Handbook. New York: McGraw Hill,

1966.

[14] Kaplan, E.L., and P. Meier, Jowr. of the Am. Statis. Assoc , 53:457, 1958.

[15] Herd, G.R., Proc. 6th Natl. Symp. on Reliab. and Qual. Control, p. 217, 1960.

[16] Fukui, H., S.H. Wemple, J.C. Irvin, W.C. Niehaus, J.C.M.

Hwang, H.M. Cox, W.O. Schlosser, and J.V. DiLorenzo, 18th An. Proc. Reliab. Phys. Symp., Las Vegas, p. 151, 1980.

[17] Irvin, J.C, (unpublished work).

[18] Wright, J., and E.B. Hakim, llth An. Proc. Reliab. Phys. Symp., Las Vegas, p. 224, 1973.

[19] Shumka, A., and R.R. Piety, 13th An. Proc. Reliab. Phys. Symp., Las Vegas, p. 93, 1975.

[20] Anderson, W.T., A. Christou, and K.J. Sieger, 17th An. Proc. Reliab. Phys. Symp., San Francisco, p. 127, 1979.

[21] Abbott, D.A., and J.A. Turner in Gallium Arsenide and Related Compounds (Edinburgh) 1976 (Inst. Phys. Conf. Ser. no. 33a) p. 255. London. Adam Helger/The Institute of Physics, 1977.

[22] Abbott, D.A., and J.A. Turner, IEEE Trans, on Microwave

Theory Tech., MTT-24:321, 1976. [23] Huang, C, F. Kwan, S.Y. Wang, P. Galle, and J.S. Barrera,

17th An. Proc. Reliab. Phys. Symp., San Francisco, p. 143,

1979.



[24] Omori, М., J. Wholey, and J.F. Gibbons, 18th An. Proc. Reliab. Phys. Symp., Las Vegas, p. 134. 1980.

[25] Madzy, T.M., IEEE Trans. Electron. Devices, ED-23:1099, 1976.

[26] Sbar, N.L., and R.P. Kozakiewicz, 16th An. Proc. Reliab.

Phys. Symp., Las Vegas, p. 161, 1978. [27] Mukherjee, S.D., D.V. Morgan, M.J. Howes, J.G. Smith, and

P. Brook,/ Vac. Sci. and TechnoL. 16:138, 1979. [28] Cohen, E.D., and A.C MacPherson, 17th An. Proc. Reliab.

Phys. Symp., San Francisco, p. 156, 1979. [29] Morizane, K., M. Dosen, and Y. Mose in Gallium Arsenide

and Related Compounds (St. Louis) 1978 (Inst. Phys. Conf.

Ser. no. 45) p. 287. London: Adam Helger/The Institute of

Physics, 1979.

[30] Wemple, S.H., et al., IEEE Trans. Electron. Devices, ED-28:834, [31] Asai, S:, S. Ishioka, H. Kurono, S. Takahashi, and H. Kodera,

Supplement to Jour, of Jap. Soc. of AppL Phys., 42:71, 1973. [32] Alderstein, M.G., Electron Lett., 12:297, 1976. [33] Meignant, D., D. Boccon-Gibod, and J.M. Bourgeois, Electron

Lett., 15:779, 1979. [34] Lang, D.V., / AppL Phys., 45:3023, 1974. [35] Chen, F., and J.C. Irvin, (unpublished work). [36] Kimerling, L.C, IEEE Trans. NucL Sci, NS-23:1497, 1976. [37] Ballamy, W.C, and L.C. Kimerling, IEEE Trans. Electron.

Devices, ED-25:746, 1978. [38] Sieger, K., and A. Christou, Solid-State Electron., 21:677,

1978.

[39] Fukui, H., private communication.

[40] White, P.M., B.L. Hewitt, and J.A. Turner, Proc. 8th European

Microwave Conference, Paris, p. 405, 1978. [41] Mizuishi, K., H. Kurono, H. Sato, and H. Kodera, IEEE Trans.

Electron. Devices, ED-26:1008, 1979.

к главе 13

[1] Mead, CA., Proc. IEEE, 54: 307, 1966.

[2] Hooper, W.W. and W.I. Lehrer, Proc. IEEE, 55:1237, 1967.

[3] Wolf, ?.,IBMJ. Res. Develop., 14:125, 1970.

464-





0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 [155] 156 157 158 159 160 161 162 163 164 165

0.0039