Главная Промышленная автоматика.

[9] Ohata, К., Т. Nozaki, and N. Kawamura, IEEE Trans. Electron Devices, ED-24:1129, 1977.

[10] Fukuta, M. et al., IEEE Trans. Microwave Theory and Technique, MTT-24:312, 1976.

[11] Pucel, R.A., D.J. Masse, and CP. Krumm, IEEE Journal of Solid-state Circuits, SC-11:243, 1976.

[12] Nozaki, T. and K. Ohata, Proc. 8th Conf on Solid State Devices, Tokyo, p. Ill, 1976.

[13] Ohata, K., H. Ito, F. Hasegawa, and Y. Fujiki, IEEE Trans. Electron Devices, ED-27:1029, 1980.

к главе 7

[1] Drukier, I., P.C. Wade, and J.W. Thompson, European Microwave Conference, Brighton, England, 1979.

[2] DiLorenzo, J.V., and W.R. Wisseman, IEEE Trans, on MTT, MTT-27.-367, 1979.

[3] Niehaus, W.C, et al., Gallium Arsenide and Related Compounds (St. Louis), p. 271, 1976.

[4] Fukuta, M., et al., IEEE Trans, on MTT, MTT-24:3 12, 1976.

[5] Furutsukia, Т., Т. Tsuje, and F. Hasegawa, IEEE Trans. Electron. Dev., ED-25:563, 1976.

[6] Pucel, R.A. and CF. Krumm, Electronics Letters, 12:240, 1976.

[7] Wade, P.C. and I. Drukier, ISSCC, San Francisco, 1980.

[8] Drukier, I. and J.F. Silcox, Jr., European Microwave Conference, Brighton, England, 1979.

[9] Drukier, I., and J.F. Silcox, Jr., International Reliability Physics Symposium, San Francisco, p. 150, 1979. [10] Cohen, E.D. and A.C. Macpherson, International Reliability

Physics Symposium, San Francisco, p. 156, 1979. [11] Macpherson, A.C, K.R. Gleason, and A. Christou, Proc. IEEE Advanced Techniques in Failure Analysis Symposium, Los Angeles, 1978.

к главе 8

[1] Ogawa, M., K. Ohata, T. Furutsuka and N. Kawamura, IEEE



Trans. Microwave Theory and Tech., MTT-24:300, 1976.

[2] Fukuta, M., T. Mimura, I. Tajumura, and A. Furumoto, IEEE Int. Solid-state Circuits Conf., Dig. Tech. Papers, p. 84, 1973.

[3] Fukuta, M., et al., IEEE Int. Solid-State Circuits Conf., Dig. Tech. Papers, p. 166, 1976.

[4] Stoneham, E., T.S. Tan, and J. Gladstone, IEEE Int. Electron Devices Meeting Dig. Tech. Papers, p. 330, 1977.

[5] Wemple, S.H., and W.C. Niehaus, Gallium Arsenide and Related Compounds (St. Louis), p. 262, 1976.

[6] Niehaus, W.C. et al.. Gallium Arsenide & Related Compounds, p. 271, 1976.

[7] Hasegawa, F. et al., IEEE Int. Solid State Circuit Conf., Dig.

Tech. Papers, p. 118, 1978. [8] Mimura, Т., H. Suzuki and M. Fukuta, Proc. IEEE (Lett.),

65:1407,1977.

[9] Yamamoto, R., A. Higashisaka, and F. Hasegawa, IEEE Trans. Electron Devices, ED-25:567, 1978.

[10] Furutsuka, T. et al. Electron. Lett., 15:417, 1979.

[11] Higashisaka, A. et al., llth Conf (Int.) on Solid State Devices, Tokyo, Paper No. B-1-6, 1979.

[12] Higashisaka, A., private communication.

[13] Fukuta, M. et al., IEEE Trans. Microwave Theory and Tech., MTT-24:312, 1976.

[14] Engelmann, R.W.H. and C.A. Liechti, IEEE Trans. Electron. Devices, ED-24:1288, 1977.

[15] Aono, Y., A. Higashisaka, T. Ogawa, and F. Hasegawa,/йрйя. J. Appl. Phys. vol. 17, Suppl. 17-1:147, 1978.

[16] Higashisaka, A., Y. Takayama, and F. Hasegawa, IEEE Trans. Electron. Devices, ED-11:104, 1975.

[17] Drukier, I., et al, Electron. Lett., 11:104, 1975. [18] Mitsui, Y., et al., European Microwave Conference Tech. Dig., p. 272, 1979.

[19] DAsaro, L.A., J.V. DiLorenzo, and H. Fukui, IEEE Int. Electron. Devices Meeting Dig. Tech. Papers, p. 370, 1977.



[20] DiLorenzo, J. and W. Wisseman, IEEE Trans. Microwave Theory and Tech., MTT-27:367, 1979.

[21] Anderson, J.R., M. Omori, and F. Cooke, IEEE Int. Electron. Devices Meeting Dig. Tech. Papers, p. 133, 1978.

[22] Hewitt, B.S., et al., European Microwave Conference Tech. Dig., p. 265, 1979.

[23] Aono, Y., et al. in annual spring meeting of lECE, Japan. Tech. Dig., paper No. 353, 1979.

[24] Macksey, И.М., T.G. Blocker, and F.H. Doerbeck, Electron. Lett., 13:312, 1977.

[25] Wemple, S.H., et з1.. Electron. Lett., 14:175, 1978. [26] Honjo, K., et al., 1979 Int. MTT-S Microwave Symposium Tech. Dig., p. 289, 1979.

[27] Honjo, K., Y. Takayama, and A. Higashisaka, IEEE Trans. Microwave Theory and Tech., MTT-27:76, 1979.

[28] Macksey, H.M., et al., IEEE Trans. Electron. Devices, ED-24: 113, 1977.

[29] Mitsui, Y., et al., Electron. Lett., 15:461, 1979. К главе 9

[1] Macksey, H.M., et al., IEEE Trans. Electron Devices, ED-24: 113, 1977.

[2] Macksey, H.M., T.G. Blocker, and F.H. Doerbeck, Electronics

Letters, 13:312, 1977. [3] Blocker, T.G., H.M. Macksey, and F.H. Doerbeck,/ Vac. Sci.

TechnoL, 15:965, 1978. [4] DiLorenzo, J.V. and W.R. Wisseman, IEEE Trans. Microwave

Theory and Techniques, MTT-27:367, 1979. [5] Macksey, H.M., F.H. Doerbeck, and R.C. Vail, IEEE Trans.

Electron Devices, ED-27:467, 1980. [6] Fukuta, M., K. Suyama, H. Suzuki, Y. Nakayama, and H. Ishi-

kawa, IEEE Trans. Microwave Theory and Techniques, MTT-

24:312, 1976.

[7] Wemple, S.H., and W.C. Niehaus in Gallium Arsenide and Related Compounds (Inst. Phys. Conf. Ser. 33b), p. 262. Bristol:





0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 [153] 154 155 156 157 158 159 160 161 162 163 164 165

0.0045