Главная Промышленная автоматика.

[21] Seki, Н., A. Koukitu, M. Fujimoto,/др. Appl. Phys., 16:847, 1977.

[22] Hallais, J.P., Brevet Francais, 76.06.832 du 10.03.76. [23] Knight, J.R., D. Effer, P.R. Evans, Sol. St. Electron, 8:178, 1965.

[24] Effer, D., J. Electrochem. Soc, 112:1020, 1965.

[25] Dilorenzo, J.V.,7. Cryst. Growth, 17:189, 1972.

[26] Nozaki, Т., et al. in Gallium Arsenide and Related Compounds (Deauville) 1974 (Inst. Phys. Conf. Ser. no. 24) p. 46. London: Adam Helger/The Institute of Physics, 1975.

[27] Cox, H.M., and J.V. DiLorenzo in Gallium Arsenide and Related Compounds (St. Louis) 1976 (Inst. Phys. Conf. Ser. no. 33b) p. 11. London: Adam Helger/The Institute of Physics, 1977.

[28] Tietjen, J.J.,J.A. Amick.y. Electrochem. Soc, 113:724, 1966. [29] Hollan, L., C. Schiller,/. Cryst. Growth, 13-14:319, 1972. [30] Hollan, L., C. Schiller, / Cryst. Growth, 22:175, 1974. [31] Hollan, L., J.M. Durand, R. Cadoret,/ Electrochem. Soc,

124:135, 1977. [32] Shaw, D.W., / Electrochem. Soc, 117:683, 1970. [33] Hollan, L., Inst. Phys. Conf. Ser., 24:22, 1975. [34] Dilorenzo, J.v., G.E. Moore Jr., / Electrochem. Soc, 118:

1823, 1971.

[35] Hollan, L., J.P. Hallais, C. Schiller, / Cryst. Growth, 9:165, 1971.

[36] Okamoto, H., S. Shakta, K. Sakai,/ Appl. Phys., 44:1316, 1973.

[37] Hasegawa, F.,/ Electrochem. Soc, 119:930, 1972.

[38] Slaymaker, N.A., J.A. Turner, Proc. Eur. Microwave Conf.,

Bruxelles, 1973, A.5:l. [39] Martin, G.M., J.P. Farges, G. Jacob, J.P. Hallais, G. Poiblaud,

/ Appl. Phys., 51:2840, 1980. [40] Hurtes, C, L. Hollan, and M. Boulou in Gallium Arsenide and

Related Compounds (St. Louis) 1978 (Inst. Phys. Conf. Ser.

no. 45) p. 342. London: Adam Helger/The Institute of Physics,

1979.

[41] Martin, G.M., A Mitonneau, A. Mircea, Electron. Lett., 13:191, 1977.

[42] Mitonneau, A., G.M. Martin, A. Mircea, Electron. Lett., 13: 666, 1977.



[43] Согласно неопубликованным данным авторов. [44] Komeno, J., К. Kitahara, S. Ohkawa, / Cryst. Growth, 47:601, 1979.

[45] Nakai, K., K. Kitahara, A. Shibatome, S. Ohkawa,/. Electrochem. Soc, 124:163 5, 1977.

[46] Kato, Y., Y. Mori, K. Morizane,/ Cryst. Growth, 47:12, 1979.

[47] Cox, H.M., J.V. Dilorenzo, L.A. DArsaro, Proc. 1st GaAs 1С Symp., Lake Tahoe, 1979, paper no. 12.

[48] Fairman, R.D., F.J. Morin, and J.R. Oliver in Gallium Arsenide and Related Compounds (St. Louis) 1978 (Inst. Phys. Conf. Ser no. 45) p. 134. London; Adam Helger/The Institute of Physics, 1979.

[49] Crossler, I., et al. in Gallium Arsenide and Related Compounds (St. Louis) 1976 (Inst. Phys. Conf. Ser. no. 33b) p. 289. London: Adam Helger/The Institute of Physics, 1977.

[50] Clegg, J.B., G.B. Scott, J.P. Hallais, A. Mircea-Roussel, / Appl. Phys., 52(2): 1110, 1981.

[51] Kasahara, J., N. Watanabe,/др. / Appl. Phys., 19:L 151. 1980.

[52] Magee, T.J., J. Peng, J.D. Dong, CA. Evans Jr., V.R. Deline

Jr., R.M. Malbon, Лрр/. Phys. Lett., Ъ5:177, 1979. [53] Fairman, R.D., F.J. Morin, and J.R, Oliver in Gallium Arsenide

and Related Compounds (St. Louis) 1978 (Inst. Phys. Conf.

Ser. no. 45) p. 134. London: Adam Helger/The Institute of

Physics, 1979.

[54] Chane, J.P., J.P. Hallais, Acta Electronica. 23:11, 1980.

[55] Hales, M.C, J.R. Knight, CW. Wilkins, Inst, of Physics, Bristol,

1971,Inst. Phys. Conf. Ser., 9:52. [56] HoUan, L., M. Boulou, J.P. Chane, / Electr. Mat., 10:193,

1981.

[57] Chane, J.P.,y. Electrochem. Soc, 127:913, 1980.

[58] HoUan, L., and A. Mircea in Gallium Arsenide and Related Compounds (Boulder) 1972 (Inst. Phys. Conf. Ser. no. 17) p. 217. London: Adam Helger/The Institute of Physics, 1973.

[59] Feng, M., V. Eu, T. Zielinski, H.B. Kim, Inst. Phys. Conf Ser., 56:1, 1980.

[60] Komeno, J., et al. in Gallium Arsenide and Related Compounds (Vienna) 1980 (Inst. Phys. Conf. Ser. no. 56) p. 9. London: Adam Helger/The Institute of Physics, 1981.



к главе 3

[I] Schneider, M.V., R.A. Linke, and A.Y. Cho, Appl. Phys. Lett 31:219, 1977.

[2] Meeks, E.L., G.N. Hill, and D.W. Covington, 1st Int. Symp. on Molecular Beam Epitaxy, Paris, April 1978.

[3] Cho, A.Y., and F.K. Reinhart, J. Appl. Phys., 45:1812, 1974.

[4] Wood, C.E.C., J. Woodcock, and J.H. Harris in Gallium Arsenide and Related Compounds (St. Louis) 1978 (Inst. Phys. Conf. Ser. no. 45) p. 28, London: Adam Helger/The Institute of Physics, 1979.

[5] Covington, D., and W.H. Hicklin, Electronics Lett., 14:759, 1978.

[6] Eldridge, G.W., H.M. Hobogood, and D.L. Barret, 38th Ann. Device Research Conference, Cornell U., Abstracts, June 1980.

[7] Blom, G.M., S.L. Blank and J.M. Woodall, ed., Liquid Phase Epitaxy. Amsterdam: North Holland, 1979.

[81 Hewitt, V.S., et al., in Gallium Arsenide and Related Compounds (St. Louis) 1976 (Inst. Phys. Conf. Ser. no. 3 3a) p. 246. London: Adam Helger/The Institute of Physics, 1977.

[9] Depuis, R.D., and P.D. Dapkus, Appl. Phys. Lett., 31:466, 1977.

[101 Ohata, K., H. Itoh, jnd F- Hasegawa, Proc. 25th Int. Electron Device Meeting, Washington, Nov. 1979, p. 277.

[II] Judaprawira, S., G.M. Metze, C.E.C. Wood and L.F. Eastman, to be published.

[12] Sze, S.M., Physics of Semiconductor Devices. New York: Wiley, 1969.

[13] Williams, R.E., and .D.W. Shaw, IEEE Trans. Electron. Dev., ED-25:600, 1978.

[14] Wood, C.E.C, D. Desimone, and S. Judaprawira,/. Appl. Phys., 51:2074, 1980.

[15] Wood, C.E.C, et al., / Appl. Phys., 51:383, 1980.

[16] Hallais, J., et al. in Gallium Arsenide and Related Compounds (St. Louis) 1978 (Inst. Phys. Conf. Ser. no. 45) p. 361. Lon-

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